The IRFP260N MOSFET IC is a high-performance, N-channel power MOSFET designed for fast switching, low power loss, and high current handling. With a drain-source voltage rating of 200V and the ability to handle up to 50A of continuous current, this device is ideal for DC-DC converters, power inverters, motor drivers, and high-efficiency power control systems.
Manufactured using advanced HEXFET® technology, the IRFP260N offers low R<sub>DS(on)</sub>, fast switching times, and excellent thermal performance. Its robust TO-247 / DIP-3 package makes it suitable for both hobbyist and industrial applications, especially where efficient power switching is critical.
Features:
- N-Channel enhancement mode power MOSFET
- Advanced HEXFET® technology for high efficiency
- High-speed switching capability
- Low R<sub>DS(on)</sub> for reduced conduction losses
- High current handling up to 50A
- High voltage tolerance up to 200V
- Suitable for switching and power control applications
- TO-247 (DIP-3) package with excellent thermal dissipation
- Easy to mount on heatsinks for high-power operation
- Ideal for use in DC-DC converters, inverters, and motor drivers
Specifications:
- Part Number: IRFP260N N-channel power MOSFET
- Make: Infineon Technologies
- MOSFET Type: N-Channel
- Drain-Source Voltage (Vds): 200V
- Continuous Drain Current (Id): 50A
- Pulsed Drain Current: 200A
- Gate Threshold Voltage (Vgs(th)): 2.0V – 4.0V
- Rds(on) (Max): 0.04Ω
- Total Gate Charge (Qg): 170nC (typical)
- Power Dissipation (Pd): 280W
- Package Type: TO-247 / DIP-3 (Through Hole)
- Mounting Style: Heatsink-compatible
- Operating Temperature: -55°C to +175°C
Applications:
- MOSFET for DC-DC converters and SMPS
- Inverter circuits and UPS systems
- BLDC motor controllers and robotics
- Battery chargers and solar charge controllers
- Welding machines and inductive load switching
- High-power hobby electronics and industrial automation
Package Includes:
- 1 x IRFP260N MOSFET IC 200V 50A DIP-3 Package
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