FGW75N60HD 600V 75A N-Channel IGBT Transistor TO-247

The Fuji Electric FGW75N60HD 600V 75A is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for rugged power switching in medium-to-high power electronic circuits. Manufactured by Fuji Electric, this FGW75N60HD 600V  supports 600 V blocking voltage and 75 A collector current in a robust TO-247 through-hole package.

With excellent thermal stability and low saturation voltage, it is ideal for industrial power control applications such as motor drives, power supplies, and renewable energy systems.

Features:

• High voltage rating up to 600 V for demanding power applications.
• Supports up to 75 A collector current for robust current handling.
• Low collector–emitter saturation voltage for efficient conduction.
• High junction temperature tolerance (up to ~175 °C).
• Field-stop trench IGBT design for low switching losses and rugged performance.
• Standard TO-247 through-hole package for easy PCB implementation.

Specifications:

• Part Number: FGW75N60HD IGBT 600V 75A
• Device Type: N-Channel IGBT
• Collector-Emitter Voltage (V_CE): 600 V
• Collector Current (I_C): 75-100 A
• Gate-Emitter Voltage (V_GE): ±20 V
• Saturated V_CE Voltage: ~1.5 – 1.95 V
• Power Dissipation: ~190 – 500 W
• Package Type: TO-247 Through-Hole
• Terminals: 3 (G, C, E)

Applications:

• Industrial motor drives and control systems.
• Switch-mode power supplies (SMPS) and inverters.
• Renewable energy systems (e.g., solar inverters, wind power).
• Uninterruptible Power Supplies (UPS).
• Power factor correction (PFC) and power conversion circuits.

Package Includes:

• 1 × FGW75N60HD – (75G60HD) 600V 75A IGBT Transistor (TO-247)